The most significant advantages of thin film deposition via Atomic Later Deposition over other methods, are manifest in four distinct areas 鈥� film conformality, low temperature processing, stoichiometric control, and inherent film quality associated with the self-limiting, and self-assembled nature of the ALD mechanism ALD is exceptionally effective at coating surfaces that exhibit ultra high aspect ratio topographies, as well as surfaces requiring multilayer films with good quality interfaces technology.
ALD for highly controllable thin films
Film thickness based on self-limiting, self assembled behavior, with nanometer level control
Stoichiometric control of multicomponent films
Films/Processes scalable over very large areas
Excellent repeatability
Wide process windows (with respect to temperature or precursor dose variations)
Low defect density
Amorphous or crystalline film types depending on substrate and temperature
Fine control of multilayer coatings, heterostructures, nanolaminates, mixed oxides, graded index layers, and doping
Standard recipes available for oxides, nitrides, metals, and semiconductors
Cu2S/SnS2/ZnS trilayer deposited in silicon trench. CZST film composition profile is analyzed by SIMS following different thermal anneals.
Ref: Thimsen et al, Chemistry of Materials, 24 (16), 3188-3196 (2013). doi:10.1021/cm3015463
ALD for highly controllable thin films
Excellent conformality, 100% step coverage: uniform coatings on flat, inside porous, and around particle samples
Atomically flat and smooth coating that conforms to the substrate geometry
Conformal deposition of Li5.1TaOz deposited by ALD in 300:1 AAO nanotemplate (470:1 final AR)
Ref: Liu, J. et al., J. Phys. Chem. C 117, 20260鈥�20267 (2013).
ALD for challenging substrate
Gentle deposition process for sensitive substrates
Low temperature deposition possible (RT-800 掳C)
Low power plasma processing (as low as 20-50W) capability
Coatings demonstrated on polymers, OLEDs, and noble metal surfaces
Excellent adhesion due to chemical bonds at the first layer
Low stress due to molecular self-assembly
Al2O3 鈥� ZrO2 nanolaminate encapsulation with a water transmission rate (WVTR) of 5E-7g/m2/day at room temperature 鈥� deposited in Savannah庐 at 80藲C
Ref: Meyer, J., et al. (2009). Applied Physics Letters, 94(23), 233305