The most significant advantages of thin film deposition via Atomic Later Deposition over other methods, are manifest in four distinct areas – film conformality, low temperature processing, stoichiometric control, and inherent film quality associated with the self-limiting, and self-assembled nature of the ALD mechanism ALD is exceptionally effective at coating surfaces that exhibit ultra high aspect ratio topographies, as well as surfaces requiring multilayer films with good quality interfaces technology.
ALD for highly controllable thin films
Cu2S/SnS2/ZnS trilayer deposited in silicon trench. CZST film composition profile is analyzed by SIMS following different thermal anneals.
Ref: Thimsen et al, Chemistry of Materials, 24 (16), 3188-3196 (2013). doi:10.1021/cm3015463
ALD for highly controllable thin films
Conformal deposition of Li5.1TaOz deposited by ALD in 300:1 AAO nanotemplate (470:1 final AR)
Ref: Liu, J. et al., J. Phys. Chem. C 117, 20260–20267 (2013).
ALD for challenging substrate
Al2O3 – ZrO2 nanolaminate encapsulation with a water transmission rate (WVTR) of 5E-7g/m2/day at room temperature – deposited in Savannah® at 80˚C
Ref: Meyer, J., et al. (2009). Applied Physics Letters, 94(23), 233305