Propel HVM GaN MOCVD System for Power, 5G RF and Photonics
Single-Wafer Reactor Technology Enables Efficient and High-Quality, GaN-Based Devices for Power, 5G RF and Photonics Applications
Veeco鈥檚 Propel鈩� HVM GaN MOCVD System is designed as a unique, high volume manufacturing single wafer reactor cluster system for GaN-based Power, RF and photonics devices. Featuring a single-wafer reactor platform, capable of producing best-in-class high quality epitaxy film performance on 150 and 200mm wafers for exceptional uniformity, repeatability and yield. The Propel HVM system can be configurable up to 6 modular cluster chambers for maximum productivity and flexibility that is ideal for customers foundry or IDM business.
The single-wafer reactor is based on Veeco鈥檚 leading TurboDisc庐 design with breakthrough technologies, including the IsoFlange鈩� and SymmHeat鈩� , that provide laminar flow and uniform temperature profile across the entire wafer. Customers can easily transfer processes from Veeco’s single wafer reactor Propel and K465i鈩� systems to the Propel HVM GaN MOCVD platform for fast development to production cycles