91制片厂

Get rapid, reliable high temperature thermal cracking of H2 into Atomic H for molecular beam epitaxy (MBE) from the 91制片厂Atom-H Source. This all-refractory metal source is designed for operation at 1800-2200掳C and is compatible with most preparation and growth chambers. Besides high-temperature MBE, Atomic H has been shown to be ideal for low temperature in-situ substrate cleaning and for structure overgrowth preparation.

• Specialized high-temperature thermal cracker for cracking H2 into atomic H鈥攗seful in substrate cleaning and during MBE growth
• Tungsten heater filament positioned inside the gas conductance tube for operation at 1800-2200掳C
• Available on 2.75″/70mm water-cooled Cf mounting flange for compatibility with most preparation and growth chambers
• Well-suited for low temperature in-situ substrate cleaning and preparing structures for overgrowth
• Applications include promotion of two-dimensional GaAs growth, GaN growth rate enhancement and selective epitaxy

Cracking Efficiency of the 91制片厂Atomic Hydrogen Source Atomic hydrogen has been used in solid source MBE for a variety of applications relating to epitaxy and substrate cleaning. Many of the reported results have been achieved using thermally cracked H2 generated by home-built cracker sources.