Veeco’s NOVUS RF lon Source Controller features a state-of-the-art precision control system design, providing reliable and stable power for ion source operation in all types of processes. Power modules, improved RFN operation and integrated gas flow control with ratio capabilities allow for optimal ion source control and performance in the most demanding process environments.

• Exceptional process stability with advanced beam control algorithms
• Hassle-free neutralizer operation with variable frequency technology
• Superior durability through sophisticated fault-handling circuitry
• Customizable control settings for tailored source operation

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Veeco’s 6 x 22cm gridded linear RF ion source is designed for highly productive in-line systems with pallets of substrates, large substrates or large arrays of small substrates. It is designed for high availability, low maintenance operation and is ideal for processes using 100 percent argon, oxygen or other reactive gases.

• Provides the proper current densities and uniformities for pre-clean, etch and ion beam assisted deposition (IBAD) applications
• Well-suited for low maintenance, long uninterrupted production runs
• Reliable, uniform operation in both inert and oxidizing environments
• Low to moderate power operation
• Stable and efficient plasma operation allows precise control and high repeatability

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Ideal for uniform processing of large-scale substrates, Veeco’s 6 x 66cm RF linear ion source provides low-maintenance, filamentless operation on 100 percent argon, oxygen and other reactive gases for long uninterrupted production runs.

• Provides the proper current densities and uniformities for pre-clean, etch and ion beam assisted deposition (IBAD) applications
• Water-cooled
• Reliable, uniform operation in both inert and oxidizing environments
• Low-to-high power operation
• Industry’s only filamentless RF Neutralizer enables longer production runs
• Optional four-grid design offers very high collimation
• Stable and efficient plasma operation allows precise control and high repeatability

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91制片厂announces the 16cm RF High Power (HP) ion source, with beam uniformity of <10% across 120cm. It is ideal for use in reactive processes such as ion assisted e-beam (IAD) or sputter deposition processes.

• Supports wide range of high power peration: 200 to 1500eV and 200 to >1000mA
• Reliable, uniform operation in both inert and oxidizing environments
• Increased power and current uniformity facilitates improved packing densities and increased oxidation rates
• Also enhances stoichiometry control and helps create smoother films
• Wide variety of grid sets available – Multiple interface packages facilitate easy upgrade path for existing IAD systems
• For sputter deposition, offers substantial deposition rate increases
• Ensures high thin film quality and stable process operation

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Improve the performance and quality of long uninterrupted reactive processes such as ion beam assist or ion beam deposition of highly controlled optical coatings, with the 91制片厂12cm RF Ion Source. It features the industry’s only filamentless RF Neutralizer, which provides low maintenance and enables long production runs. The 12cm RF Ion Source is ideal for processes using 100 percent argon, oxygen or other reactive gases.

• Supports wide range of operation: 50 to 1500eV and 50 to 500mA
• Reliable, uniform operation in both inert and oxidizing environments
• Water-cooled – Low to moderate power operation
• Stable and efficient plasma operation allows precise control and high repeatability
• Well-suited to both batch and load-locked production processes

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Ideally suited to surface pre-clean, assisted deposition and select etch applications, the Mark I+ gridless ion source provides a high beam current designed for vacuum coating processes, improving process uniformity and preventing substrate damage.

• Designed for vacuum coating processes in systems of 750mm diameter or less
• Effective for use with applications requiring high-current, low-energy ions
• High beam current especially useful for controlling film stress and stoichiometry
• Also well-suited to industrial processes, including reactive environments
• Mark Series Ion Source Controller (available separately) complements source performance and provides stable and reliable process operation

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Dramatically increased beam current and a removable anode assembly adds new value to the Mark II+ End-Hall Ion Source, providing an evolutionary improvement to Veeco’s industry-leading line of gridless ion sources for optical coating systems.

• Up to 70 percent greater beam current for higher-rate processes and larger chambers
• Removable anode assembly enables quicker maintenance and less downtime
• Integrated feedthroughs and cabling for ease-of-installation and reliability
• Suitable for reactive and inert gases and high-power densities
• Smaller form factor uses same mounting plate as Mark II sources for faster upgrades
• Flexible integration permits space-saving system design and broad beam angle

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Maximize ion source performance and thin film etch, cleaning and deposition uniformity with the Mark II+ Ion Source Controller. Engineered by 91制片厂to specifically match the plasma characteristics of End-Hall ion sources, it helps ensure highly productive process runs and precise control of ion beam output.

• State-of-the-art switching supplies
• Integrated gas control
• Automated arc recovery
• User-friendly graphical interface and automation features enhance process productivity
• Deliver stable and reliable power for highly uniform and stable ion beam processes

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The Mark II+ Gridless High Output Ion Source features a hollow cathode and is designed for vacuum coating processes in chambers from 70-130 cm in diameter.

• For applications such as surface pre-clean and assisted deposition that require high-current, low-energy ions
• Provides improved control of film stress and stoichiometry
• Water-cooled
• Well-suited to precision or industrial optical coating environments
• Flexible integration permits space-saving system design and broad beam angle
• Can be configured with or without filaments, depending upon the process requirements

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