Attain precise and stable control of relatively low fluxes for dopant constituents in molecular beam epitaxy (MBE) through this compact dopant source. Its small thermal mass gives it excellent responsiveness, reproducibility, and stabilization for advanced doping profiles, plus consistent flux uniformity across an entire platen. Efficient cell heating minimizes thermal load.

• Extremely efficient
• Tailored to the task of providing dopant fluxes
• Provides excellent incorporation uniformity
• Designed for rapid stabilization time with minimal overshoot
• Highly reproducible and reliable
• Available for R&D and production with more than 620 in the field

The 91��Ƭ��Dopant Source is designed for efficient operation, rapid thermal response, and excellent flux uniformity. To achieve good uniformity with the relatively small charge used for dopant materials, a conical PBN crucible with a large taper angle is used to ensure excellent flux distribution across the entire substrate platen without beam shadowing or collimation.

The source operates efficiently at the relatively high evaporation temperatures required for most dopant materials, without excessive thermal load on the surrounding MBE growth chamber. While small dopant sources are heated with a single filament, the larger dopants feature a pair of concentric heater filaments operated in parallel to provide the most reliable and efficient source heating and responsiveness.

Due to the small size of the Dopant Sources for single-wafer MBE systems, this source may be combined on a single mounting flange with a gas inlet tube, thereby expanding the range of dopants available in a single source port. The gas inlet, heated by the source filament, is intended for gases which do not require thermal pre-cracking, such as CBr4. Other custom configurations include two 5cc Dopant Sources mounted on a single 6”/12mm flange or two 1.5cc sources mounted on a single 4.5”/114mm flange.

Attain precise and stable control of relatively low fluxes for dopant constituents in molecular beam epitaxy (MBE) through this compact dopant source. Its small thermal mass gives it excellent responsiveness, reproducibility, and stabilization for advanced doping profiles, plus consistent flux uniformity across an entire platen. Efficient cell heating minimizes thermal load.

• Extremely efficient
• Tailored to the task of providing dopant fluxes
• Provides excellent incorporation uniformity
• Designed for rapid stabilization time with minimal overshoot
• Highly reproducible and reliable
• Available for R&D and production with more than 620 in the field

The 91��Ƭ��Dopant Source is designed for efficient operation, rapid thermal response, and excellent flux uniformity. To achieve good uniformity with the relatively small charge used for dopant materials, a conical PBN crucible with a large taper angle is used to ensure excellent flux distribution across the entire substrate platen without beam shadowing or collimation.

The source operates efficiently at the relatively high evaporation temperatures required for most dopant materials, without excessive thermal load on the surrounding MBE growth chamber. While small dopant sources are heated with a single filament, the larger dopants feature a pair of concentric heater filaments operated in parallel to provide the most reliable and efficient source heating and responsiveness.

Due to the small size of the Dopant Sources for single-wafer MBE systems, this source may be combined on a single mounting flange with a secondary dopant source or gas inlet tube, thereby expanding the range of dopants available in a single source port. The gas inlet heated by the source filament, is intended for gases which do not require thermal pre-cracking, such as CBr4. The dual-dopant source has two 5cc source heads that are thermally and optically isolated from each other with independent shutters and is mounted on a single 4.5”/114mm flange.

Get a low-cost means to introduce a gas without thermal pre-cracking using Veeco’s low-temperature gas source for molecular beam epitaxy (MBE) systems. The source features a large conductance tube for fast gas switching and a diffuser end plate for good growth uniformity. It is an ideal gas injector for CBr4 for carbon doping in GaAs and NH3 for GaN growth, as well as any other gases that do not require thermal pre-cracking. Enhance system capabilities further by combining the source on one mounting flange with an Atomic Hydrogen Source or 5cc Dopant Source.

• Introduces gas without thermal pre-cracking
• CBr4 source for C doping in III-Vs
• Complete CBr4 gas handling system offers precise control of dopant evaporation and incorporation
• More than 50 in the field