91ÖÆƬ³§is the leading provider of atomic layer deposition (ALD) systems for research and industry worldwide, delivering comprehensive services and versatile, turnkey systems that are accessible, affordable and accurate to the atomic scale. Thin film deposition is our expertise. Our Savannah® Series of thin film deposition tools exemplifies these competencies.

Savannah® has become the preferred system for university researchers worldwide engaged in ALD and looking for an affordable yet robust platform. We have delivered hundreds of these systems in the past decade. Savannah®’s efficient use of precursors and power-saving features substantially reduces the cost of operating a thin film deposition system.

Key features include:

• In-Situ Ellipsometry
• In-Situ QCM
• Self Assembling Monolayers
• 2-Second Cycle Times
• Integrated Ozone
• Low Vapor Pressure Deposition
• Batch Processing
• Glove Box Integration

Savannah® is equipped with high-speed pneumatic pulse valves to enable our unique Exposure Mode for thin film deposition on Ultra High Aspect Ratio substrates. This proven precision thin film coating methodology can be used to deposit conformal, uniform films on substrates with aspect ratios of greater than > 2000:1. Savannah® is available in three configurations: S100, S200, and S300. Savannah® is capable of holding substrates of different sizes (up to 300mm for the S300). The Savannah® thin film deposition systems are equipped with heated precursors lines and the option to add up to six lines. Savannah® is capable of handling gas, liquid, or solid precursors.

Savannah® G2 Technical specifications

Substrate Size	Savannah S100: up to 100 mm Savannah® S200: up to 200 mm Savannah® S300: up to 300 mm
Dimensions (w x d x h)	Savannah S100: 585 x 560 x 980 mm Savannah® S200: 585 x 560 x 980 mm Savannah® S300: 686 x 560 x 980 mm
Cabinet	Steel with white powder coat paint with removable panels and lockable precursor door
Operational Modes	Continuous Mode (high speed) or Exposure Mode (ultra-high aspect ratio)
Power	115 VAC or 220 VAC,1500 W (excluding pump)
Controls	LabVIEW, Windows 7, Lenovo Laptop, USB control
Maximum Substrate Temperature	S100: RT – 400 °C S200: RT – 350 °C S300: RT – 350 °C
Deposition Uniformity	(Al2O3) <1% (1σ)
Cycle Time	<2 seconds per cycle with Al2O3 at 200 °C
Vacuum Pump	Alcatel 2021C2 – 14.6 CFM
Compatibility	Clean room class 100 compatible
Compliance	CE, TUV, FCC
Precursor Delivery System, Ports	2 lines standard, up to 6 lines available Each line accommodates solid, liquid and gas precursors Lines can be independently heated up to 200 °C
Precursor Delivery System, Valves	Industry standard high speed ALD valves with 10 msec response time
Precursor Cylinders	Individually heated 50 ml stainless steel cylinders, optional larger cylinders available
Carrier/Venting Gas	N2 mass flow controlled, 100 SCCM
Options	Low Vapor Pressure Delivery (LVPD) System Ozone Generator Dome lid for wafer cassette or 3D objects Glove box Interface In-Situ Ellipsometry In-Situ Quartz Crystal MicroBalance (QCM) Self Assembling Monolayers (SAMs) Particle Coating

See our modular Savannah® in action.

See how the ALD process works.

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Our Fiji® series is a modular, high-vacuum thermal ALD system that accommodates a wide range of deposition modes using a flexible architecture and multiple configurations of precursors and plasma gases. The Fiji G2 is a next-generation ALD system capable of performing thermal and plasma-enhanced deposition.

We have applied advanced computational fluid dynamics analyses to optimize the Fiji® reactor, heater, and trap geometry. The system’s intuitive interface makes it easy to monitor and change recipes and processes as needed.

Fiji’s advanced features include:

• Proprietary Chamber Turbo Pumping System
• Improved Plasma Design
• Ergonomic Operator Interface
• In-Situ Ellipsometry
• In-Situ Quartz Crystal Microbalance
• Integrated Ozone
• Glove Box Interface

The Fiji® is available with up to six precursor lines that can accommodate solid, liquid or gas precursors, and six plasma gas lines, offering significant experimental flexibility in a compact and affordable footprint.

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Technical specifications

Operational Modes	Continuous Mode (Traditional Thermal ALD) Exposure Mode (High Aspect Ratio ALD) Plasma Mode (Plasma-Enhanced ALD)
Substrate Size	Up to 200 mm
Substrate Temperature	500°C 200mm substrate heater standard 800°C 100mm substrate heater optional
Deposition Uniformity	1 σ thickness uniformity on 200mm substrates Thermal Al2O3 – < 1.5% Plasma Al2O3 – < 1.5%
Precursors	4 precursor lines standard, 6 optional Gas, liquid, or solid precursors individually heatable to 200°C Industry standard high speed ALD valves (10ms minimum pulse time) Widely available 50cc (25mL fill max) stainless steel precursor cylinders
Gases	100 sccm Ar precursor carrier gas MFC 500 sccm Ar plasma gas MFC 100 sccm N2 plasma gas MFC 100 sccm O2 plasma gas MFC 100 sccm H2 plasma gas MFC
Trap	Integrated, heated, thin foil ALD trap
Compatibility	Clean Room Class 100 Compatible
Compliance	CE, TUV, FCC SEMI S2/S8 (optional)
Dimensions	Fiji system (base): 1600 x 715 x 1920 mm Fiji with load lock: 1845 x 715 x 1920 mm
Power	220-240 VAC, 4200 W per reactor (excludes pump)
Control	Microsoft Windows 10 (or higher) Laptop PC, LabView based system control
Vacuum Pump	>50CFM dry pump required Available or customer supplied
System Options	Spectroscopic Ellipsometer Ports Quartz Crystal Microbalance RGA Port Optical Emission Spectrometer Wafer Plus Ozone Generator Low Vapor Pressure Deposition Glove box Interface Automated Load LockSubstrate RF bias Hazardous gas sensors / Safety PLC Loadlock handoff to other vacuum equipment

The post Fiji – Plasma Enhanced ALD for R&D appeared first on Veeco.

The Phoenix® system is engineered for high throughput and maximum uptime in any fabrication environment, from pilot production to industrial-grade manufacturing. Technologists and researchers rely on the Phoenix® for repeatable, highly accurate film deposition on flat and 3D substrates alike. And with support for up to six individual precursor lines, the Phoenix® delivers solid, liquid, or gaseous process chemistries depending on your thin film needs. A compact footprint and innovative design makes the Phoenix® the practical choice for those with batch production ALD requirements.

Key features include:

• Precise software control of process parameters, including temperature, flow and pressure, for defect-free coatings on even the most sensitive substrates
• Patented ALD Shield vapor trap to prevent build-up of deposits and minimizes excess process gases from being exhausted into the environment
• Large process chamber accepts GEN 2.5 substrates, multiple wafer cassettes and larger 3D objects
• Low cost of ownership with minimal startup and operational costs
• Compact footprint that conserves valuable clean room space
• Standard recipes and ALD materials readily available
• Comprehensive support and services worldwide from technical team and PhD scientists
• CE, FCC, and CSA compliant with many built-in safety features

Technical specifications

Substrate Size	Up to 370 mm x 470 mm (Gen 2.5 Panels) Up to 360 wafers – 100 mm (cassette) Up to 160 wafers – 150 mm (cassette) Up to 100 wafers – 200 mm (cassette) Up to 40 wafers – 300 mm (cassette) Custom holders for 3D objects
Dimensions (W x L x H)	900 mm x 1370 mm x 1700 mm
Cabinet	Vented cabinet with smoke detection
Power	208 VAC 3 Phase, 8500 W (excluding pump)
Control	Windows PC
Substrate Temperature	Up to 285º C
Deposition Uniformity (AI203)	≤2%
Vacuum Pump	Dry pump ≥350 CFM
Compatibility	Cleanroom compatible
Precursor Delivery System	Standard 4 lines accommodate solid, liquid and gas precursors Lines independently heated up to 200°C
Valves	High speed ALD valves
Precursor Cylinders	3.1 l or 600ml cylinders
Carrier/Venting Gas	N2 or Ar MFC flow control
Chamber Volume (L x W x H)	(50cm, 40cm,24cm)

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